High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier

Huapu Pan,Solomon Assefa,William M. J. Green,Daniel M. Kuchta,Clint L. Schow,Alexander V. Rylyakov,Benjamin G. Lee,Christian W. Baks,Steven M. Shank,Yurii A. Vlasov
DOI: https://doi.org/10.1364/oe.20.018145
IF: 3.8
2012-01-01
Optics Express
Abstract:The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.
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