Abstract:Silicon photonics enables on-chip ultra-high bandwidth optical communications networks which is critical for the future of microelectronics1,2. By encoding information on-chip using multiple wavelength channels through the process of wavelength division multiplexing (WDM), communication bandwidths in excess of 1 Tbit s-1 are possible3. Already several optical components critical to WDM networks have been demonstrated in silicon, however a fully integrated multiple wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for producing a source, can be achieved in silicon through stimulated Raman scattering4,5, parametric mixing6, and the use of silicon nanocrystals7 or nanopatterned silicon8. Losses in most of these previously demonstrated devices have prevented oscillations in those structures. Raman oscillators have been demonstrated9-11, but the narrow Raman gain window limits operation to a tightly restricted (~ 1 nm) wavelength range and thus is insufficient for WDM. Losses in other previously demonstrated devices have prevented oscillations in those structures. Here we demonstrate the first monolithically integrated CMOS-compatible multiple wavelength source by creating an optical parametric oscillator (OPO) formed by a silicon nitride ring resonator on silicon coupled to an integrated waveguide. The device can generate more than 100 new wavelengths, spaced by a few nm, with operating powers below 50 mW. This source can form the backbone of a fully operational high-bandwidth optical communications network on a microelectronic chip enabling the next generation of multi-core microprocessors.

A 16-Channel Monolithic Silicon Nanophotonic Receiver

Monolithically integrated silicon nanophotonics receiver in 90nm CMOS technology node

A C-Band Four-Channel Receiver with Current-Sharing and Large-Signal Multigated-Transistor Techniques in 65-Nm CMOS

High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier

Integrated Reconfigurable Microring Based Silicon Wdm Receiver for On-Chip Optical Interconnect

A 256 Gbps Heterogeneously Integrated Silicon Photonic Microring-based DWDM Receiver Suitable for In-Package Optical I/O

16-Channel Photonic–electric Co-Designed Silicon Transmitter with Ultra-Low Power Consumption

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers.

25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Silicon Photonic Network-on-chip and Enabling Components

A Monolithically-Integrated Chip-to-Chip Optical Link in Bulk CMOS

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Monolithically integrated multiple wavelength oscillator on silicon

250 Gbps 10-channel WDM silicon photonics receiver

40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

Multiband Silicon Photonic ePIC Coherent Receiver for 64 GBd QPSK

Monolithic photonic chips for multi-channel frequency mixers and single photon detectors

Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter