Abstract:Abstract Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

Monolithically integrated silicon nanophotonics receiver in 90nm CMOS technology node

A 16-Channel Monolithic Silicon Nanophotonic Receiver

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier

40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

A Monolithically-Integrated Chip-to-Chip Optical Link in Bulk CMOS

Silicon Photonic Network-on-chip and Enabling Components

A 25gb/S 3d-Integrated Silicon Photonics Receiver In 65nm Cmos And Pic25g For 100gbe Optical Links

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Integrated Reconfigurable Microring Based Silicon Wdm Receiver for On-Chip Optical Interconnect

Development of Silicon Photonic Devices for Optical Interconnects

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

High-speed Silicon Modulators for the 2 Μm Wavelength Band

A 256 Gbps Heterogeneously Integrated Silicon Photonic Microring-based DWDM Receiver Suitable for In-Package Optical I/O

Laser Soliton Microcombs Heterogeneously Integrated on Silicon

A 100GBaud Optical Receiver Front-End in 90nm SiGe BiCMOS

Ultracompact 100 Gbps Coherent Receiver Monolithically Integrated on Silicon

An all-silicon solution

112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA