A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes

Zheng JiYuan,Wang Lai,Hao Zhi Biao,Luo Yi

DOI: https://doi.org/10.1109/URSIGASS.2014.6929410

2014-01-01

Abstract:A front-illuminated GaN n-i-p avalanche photodiode (APD) with a 25 μm diameter mesa is proposed. The gain is demonstrated to be higher in n-i-p devices compared with conventional p-i-n ones by simulation based on Spinelli analytical model.

What problem does this paper attempt to address?

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Yanning Chen,Fang Liu,Yali Shao,Yingzong Liang,Sichao Du,Wen-Yan Yin

DOI: https://doi.org/10.1109/access.2024.3449098

IF: 3.9

2024-01-01

IEEE Access

Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.
A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Zheng Ji-Yuan,Wang Lai,Hao Zhi-Biao,Luo Yi,Wang Lan-Xi,Chen Xue-Kang

DOI: https://doi.org/10.1088/0256-307x/29/9/097804

2012-01-01

Abstract:A separated absorption and multiplication GaN p-i-p-i-n avalanche photo-diode (APD) with a 25 μm diameter mesa is proposed and demonstrated.Compared to the conventional p-i-n APD,the p i-p-i-n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p-i-p-i-n APDs,and the positive coefficient of 30mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p i p-i-n APDs is 0.11 A/W under a wavelength of 358 nm.
Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

Qing Cai,Kexiu Dong,Zili Xie,Yin Tang,Junjun Xue,Dunjun Chen

DOI: https://doi.org/10.1016/j.mssp.2019.02.019

IF: 4.1

2019-01-01

Materials Science in Semiconductor Processing

Abstract:We proposed an improved front-illuminated GaN/AlGaN separate absorption and multiplication (SAM) ultraviolet avalanche photodiode (APD) based on physical analysis and device simulations. By inserting an Al0.2Ga0.8N p-type layer into the p-i-p-i-n APD structure, a built-in electric field resulted from polarization effect will be introduced to facilitate the transport of electrons from absorption layer to multiplication region. The enhanced heterostructure APD presents significantly higher multiplication gain compared with the homogeneous one. Moreover, the doping concentration and thickness of the interlayer were optimized according to device performances, because the interlay has important effects on the electric field distribution and energy-band profile of the front-illuminated SAM APD.
Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Mengjun Hou,Zhixin Qin,Chenguang He,Lise Wei,Fujun Xu,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1007/s13391-015-5142-6

IF: 3.151

2015-01-01

Electronic Materials Letters

Abstract:This paper presents the design for a heterojunction AlGaN solar-blind avalanche photodiode (APD) with improved noise performance. Increasing the Al composition of AlGaN in the multiplication layer from 0.40 to 0.45 was calculated to significantly reduce the excess noise factor of this heterojunction APD. The polarization electric field induced in the multiplication layer had the same direction as the applied reverse bias field, which helped lower the avalanche breakdown voltage. The calculated results demonstrated that the apparent spike in the electric field intensity at the i-Al 0.4 Ga 0.6 N/n-Al 0.5 Ga 0.5 N interface can be effectively suppressed by inserting a grading n-AlGaN layer, which helps reduce the dark current.
Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

Haifan You,Zhenguang Shao,Yiran Wang,Liqun Hu,Dunjun Chen,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2017.2691555

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showed that the improved APD with the Al0.3 Ga0.7N/Al0.45Ga0.55N heterogeneous multiplication region exhibits 51% higher gain than that of the conventional APD, benefiting from the six times higher hole ionization coefficient of Al 0.3Ga0.7N, compared to that of Al0.45Ga0.55N. Furthermore, we inserted an intermediate n-type AlGaN charge layer into the heterogeneous multiplication region to obtain superior performance by finely controlling the electric field distribution. The dependence of breakdown voltage and multiplication gain on the Al content, doping concentration, and thickness of the charge layer is studied in detail to get the optimal structure. Meanwhile, the solar-blind characteristic is also taken into account when optimizing the APD structure.
A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Jiyuan Zheng,Lai Wang,Xingzhao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yanjun Han,Jian Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang

DOI: https://doi.org/10.1063/1.4972397

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.
High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Yin Tang,Qing Cai,Lian-Hong Yang,Ke-Xiu Dong,Dun-Jun Chen,Hai Lu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1088/0256-307x/34/1/018502

2017-01-01

Abstract:It is well known that III-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.
Polarization Enhanced GaN Avalanche Photodiodes with P-Type In0.05Ga0.95N Layer

Haiping Wang,Haifan You,Danfeng Pan,Dunjun Chen,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2020.2969991

IF: 2.4

2020-01-01

IEEE Photonics Journal

Abstract:In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In0.05Ga0.95N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In0.05Ga0.95N layer generates a negative polarization charge at the p-In0.05Ga0.95N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In0.05Ga0.95N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the p-In0.05Ga0.95N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26 V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.
Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Zhiyu Xu,Theeradetch Detchprohm,Shyh-Chiang Shen,A. Nepomuk Otte,Russell D. Dupuis

DOI: https://doi.org/10.1109/ted.2024.3393932

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:This work reports high-performance homojunction gallium nitride (GaN) p-i-n (PIN) avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ~1.8° shallow-bevel-mesa edge termination. High-quality p-i-n GaN epitaxial layers were grown using metalorganic chemical vapor deposition (MOCVD), and the device edge termination was achieved by multistep pseudo gray-scale lithography followed by photoresist reflow and dry etching of the bevel mesa. Fabricated GaN APDs showed an ultralow dark current density A/cm2 in the low-mid reverse bias voltage region prior to avalanche breakdown and achieved a current-limited photocurrent gain of under deep-ultraviolet (DUV) illumination at nm and a reverse bias −107 V. The total current density without illumination was in the order of A/cm2 at the onset of avalanche breakdown. The avalanche breakdown characteristic was confirmed by temperature-dependent J–V studies, with a derived positive temperature coefficient of 0.02 V/K for the breakdown voltage (BV). The analysis of the temperature-dependent reverse-bias characteristics indicated that the reverse leakage current components before avalanche could be attributed to trap-assisted tunneling (TAT) and phonon-assisted tunneling (PAT) processes.

engineering, electrical & electronic,physics, applied
Unipolar Carrier Multiplication High-Gain and Low-Noise AlGaN Ultraviolet Avalanche Photodiode with Periodically Stacked Structure

Jiying Cao,Jin Wang,Haifan You,Pengfei Shao,Hui Guo,Junjun Xue,Qing Cai,Dunjun Chen

DOI: https://doi.org/10.1088/1361-6463/acf9b3

2023-01-01

Abstract:Highly sensitive avalanche photodetector (APD) has become a promising candidate for detecting extremely weak target signals. However, the impact ionization multiplication simultaneously triggered by electrons and holes will lead to large excess noise, thus significantly influencing device avalanche performance. Herein, we propose a distinctive AlGaN-based ultraviolet avalanche photodiode with AlN/Al0.2Ga0.8N periodically stacked multiplication region. The higher effective masses and density of states in valence band renders holes limited in the quantum-well region, where thermalization plays a dominant role during carrier transport process. On the contrary, in the atomic-scale AlN/AlGaN stacked structure with a periodic thickness of 10 nm, the electron mutualization motion is conductive to electron obtaining sufficient energy to induce impact ionization. Hence, the mechanism of unipolar carrier induced avalanche multiplication effectively reduces device noise and improving multiplication gain. Meanwhile, the high electric field intensity and tilted energy band in the AlGaN/AlN periodically stacked region significantly contribute to the carrier impact ionization. Consequently, the device achieves a superior avalanche gain of more than 105 at 74 V reverse bias. It is envisioned that the unipolar carrier triggering avalanche events offers a viable route to build high-performance APDs.
Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Z. G. Shao,X. F. Yang,H. F. You,D. J. Chen,H. Lu,R. Zhang,Y. D. Zheng,K. X. Dong

DOI: https://doi.org/10.1109/led.2017.2664079

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:A heterostructure multiplication region consisting of high/low-Al-content AlGaN layers instead of the conventional high-Al-content AlGaN homogeneous layer was proposed to increase the average hole ionization coefficient and to realize a higher gain in AlGaN avalanche photodiodes (APDs) based on separate absorption and multiplication structures. The fabricated APDs with the Al0.2Ga0.8N/Al0.45Ga0.55N heterostructure multiplication region exhibit very steep breakdowns and a maximum gain of $5.5\times 10^{4}$ at a reverse bias of 109 V. Meanwhile, the large potential barrier to the conduction band formed at the Al0.2Ga0.8N/Al0.45Ga0.55N heterostructure interface can suppress the electron-initiated multiplication, and hence, reduce the noise of the APDs by impeding the transport of electrons. The simulation of noise confirms this effect from the heterostructure.
Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

Xiaolong Cai,Lianghui Li,Hai Lu,Dong Zhou,Weizong Xu,Dunjun Chen,Fangfang Ren,Rong Zhang,Youdou Zheng,Guanglei Li

DOI: https://doi.org/10.1109/lpt.2018.2817881

IF: 2.6

2018-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, in order to improve avalanche characteristics in deep ultraviolet range and enhance fill factor, vertical 4H-SiC n-i-p-n avalanche photodiodes (APDs) are designed and fabricated, in which avalanche current flows through a forwardbiased p-n junction formed between the p epi-layer and the n-type substrate. Compared with a traditional n-i-p APD, no obvious difference of gain-voltage and photo-response characteristics is observed, indicating the feasibility of the proposed n-i-p-n device structure. When a partial trench isolation scheme is applied, the vertical n-i-p-n APD shows a high fill factor of 78.3% and a low-bias quantum efficiency of 66%.
Theoretical Analysis for AlGaN Avalanche Photodiodes with Mesa and Field Plate Structure*

Ke-Xiu Dong,Dun-Jun Chen,Qing Cai,Yan-Li Liu,Yu-Jie Wang

DOI: https://doi.org/10.1088/1674-1056/ab90f1

2020-01-01

Abstract:To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p–n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.
Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes

Youran Huang,Dunjun Chen,Huanjun Lu,KeXiu Dong,Rong Zhang,Youdou Zheng,Liben Li,Zhonghui Li

DOI: https://doi.org/10.1063/1.4772984

IF: 4

2012-01-01

Applied Physics Letters

Abstract:This letter reports the fabrication and performance of back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes. Devices with a 60-mu m-diameter active area and a double-mesa structure exhibit a low dark current density of 1.06 x 10(-8) A/cm(2) at the reverse bias of 20 V and a maximum multiplication gain up to 3000 at the reverse bias of 91 V. The temperature dependence of avalanche voltage shows a large positive temperature coefficient of 0.05 V/K, confirming that avalanche multiplication is the dominant gain mechanism in the photodiodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772984]
Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Qing Cai,Qian Li,Mo Li,Yin Tang,Jin Wang,Junjun Xue,Dunjun Chen,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2019.2914146

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 × 104, higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.
Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications

Yingjie Ma,Yonggang Zhang,Yi Gu,Xingyou Chen,Peng Wang,Bor-Chau Juang,Alan C. Farrell,Baolai Liang,Diana L. Huffaker,Yanhui Shi,Ben Du,S.P. Xi,Hengjing Tang,Jiaxiong Fang

DOI: https://doi.org/10.1002/adom.201601023

IF: 9

2017-01-01

Advanced Optical Materials

Abstract:Exploring the potentiality of enhancing the performance of avalanche photodiodes (APDs) using novel nanoscale structures is highly attractive for overcoming the bottleneck of avalanche probability. This work demonstrates, for the first time, multiplication enhancement of electron-initiated photocurrent due to impact ionization in InAs quantum dots (QDs) within a GaAs APD structure. A five-layer stacked 2.25 MLs InAs QD/50 nm GaAs spacer multiplication structure integrated into a separated absorption, charge, and multiplication GaAs homo APD results in up to six times higher multiplication factors in comparison to a reference device without QD over a temperature range of 77-300 K. In addition, extremely low excess noise factor in close proximity to that of silicon is also observed with an effective k(eff) factor below 0.1. This demonstration is of fundamental interest and relevant for future ultra efficient avalanche detector applications.
InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Chengyu Li,Shiyu Qiu,Xindong Ruan,Chao Liu,Qijin Cheng

DOI: https://doi.org/10.1016/j.mtcomm.2024.109248

IF: 3.8

2024-05-18

Materials Today Communications

Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

materials science, multidisciplinary
An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

Yin Tang,Qing Cai,Lian-Hong Yang,Ke-Xiu Dong,Dun-Jun Chen,Hai Lu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1088/1674-1056/26/3/038503

2017-01-01

Chinese Physics B

Abstract:To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.
AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

Q. Cai,W. K. Luo,Q. Li,M. Li,D. J. Chen,H. Lu,R. Zhang,Y. D. Zheng

DOI: https://doi.org/10.1063/1.5049621

IF: 4

2018-01-01

Applied Physics Letters

Abstract:A high-performance Al0.1Ga0.9N ultraviolet (UV) avalanche photodiode (APD) with a separate absorption and multiplication structure grown on AlN templates is fabricated by employing a triple-mesa structure. The fabricated AlGaN UV-APD exhibits a maximum gain up to 2.3 × 104 at the reverse bias of 67 V and a low avalanche breakdown voltage (<70 V). The triple-mesa structure is confirmed to significantly lower the avalanche breakdown voltage and reduce the sidewall leakage current in comparison with the conventional double-mesa one. These improvements are explained by the simulation of the electric field which shows a significant improvement in the distribution uniformity in the active regions and enhancement in the intensity in the multiplication region. In addition, the scaling effects of various anodes and mesas are investigated, and the dark current is found to decrease with a decrease in the mesa size thanks to the reduced amount in the high-conductivity threading dislocation that crosses the multiplication region.
Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Tianyi Li,Xiaoqiang Tao,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1109/LPT.2023.3276907

IF: 2.6

2023-01-01

IEEE Photonics Technology Letters

Abstract:In this work, a 4H-SiC n-i-p avalanche photodiode (APD) with n-layer formed by N ion implantation is demonstrated, in which recessed-window structure is used as termination for reducing electrical field crowding effect around the device edge. The APD with 20 mu m diameter active region exhibits low dark current of similar to 5 pA, high gain of 10(6), zero-bias peak quantum efficiency of 53.8 % at 265 nm. Two-dimensional avalanche photocurrent mapping indicates that uniform gain is realized across the device central region while edge-located premature breakdown is effectively suppressed. Since there is no shading effect of top contact metal, close to 100% percent of fill factor is achieved in the multiplication region. The APD can operate in Geiger mode by using a passive quenching circuit. A room temperature single photon detection capability is obtained at 280 nm, when the dark count rate is similar to 28.8 Hz/mu m(2).

A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Polarization Enhanced GaN Avalanche Photodiodes with P-Type In0.05Ga0.95N Layer

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Unipolar Carrier Multiplication High-Gain and Low-Noise AlGaN Ultraviolet Avalanche Photodiode with Periodically Stacked Structure

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

Theoretical Analysis for AlGaN Avalanche Photodiodes with Mesa and Field Plate Structure*

Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation