Abstract:The work demonstrates the exfoliation of wafer‐scale GaN films and its application in flexible light‐emitting diodes (LEDs). First‐principles calculations reveal that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is stronger than that of Ga atoms, and a strain‐relaxation model for nitrides on h‐BN is proposed. The flexible free‐standing LED exhibits ≈66% luminescence enhancement compared to that before transfer. Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer‐scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h‐BN composite buffer layer and its application in flexible InGaN‐based light‐emitting diodes (LEDs) is demonstrated. Guided by first‐principles calculations, the nucleation and bonding mechanism of GaN and AlN on h‐BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high‐temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain‐relaxation model for III‐nitrides on h‐BN is proposed. Eventually, the mechanical exfoliation of single‐crystalline GaN film and LED through weak interaction between multilayer h‐BN is realized. The flexible free‐standing thin‐film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

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Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process

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Phase Reaction of Au/Sn Solder Bonding for GaN-based Vertical Structure Light Emitting Diodes

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates

In Situ Fabrication of Bendable Microscale Hexagonal Pyramids Array Vertical Light Emitting Diodes with Graphene As Stretchable Electrical Interconnects

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

Study of GaN light-emitting diodes fabricated by laser lift-off technique

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Research on Auto-split GaN-based Vertical Structure LED

High-output power GaN-LED based on surface plasmon enhancement

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Thin Film GaN-Based LEDs on Cu Substrates Fabricated by Laser Lift-Off