Abstract:Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density. Synopsis : The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

An Improved Carrier Rate Model To Evaluate Internal Quantum Efficiency And Analyze Efficiency Droop Origin Of Ingan Based Light-Emitting Diodes

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.

Study On Efficiency Droop In Ingan/Gan Light-Emitting Diodes Based On Differential Carrier Lifetime Analysis

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

Identifying the role of carrier overflow and injection current efficiency in GaN-based Micro-LED efficiency droop model

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

A Differential Carrier Lifetime Analysis on GaN-based LED’s Quantum Efficiency

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Efficiency Droop Suppression of InGaN‐based Blue Light‐emitting Diodes Using Dip‐shaped Quantum Wells