Abstract:Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

Study On Efficiency Droop In Ingan/Gan Light-Emitting Diodes Based On Differential Carrier Lifetime Analysis

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.

A Differential Carrier Lifetime Analysis on GaN-based LED’s Quantum Efficiency

An Improved Carrier Rate Model To Evaluate Internal Quantum Efficiency And Analyze Efficiency Droop Origin Of Ingan Based Light-Emitting Diodes

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

Identifying the role of carrier overflow and injection current efficiency in GaN-based Micro-LED efficiency droop model

Efficiency Droop Behavior of Direct Current Aged GaN-based Blue Light-Emitting Diodes

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

Efficiency Droop in Ingan/Gan Multiple-Quantum-Well Blue Light-Emitting Diodes Grown on Free-Standing Gan Substrate

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

Temperature-Dependent Efficiency Droop Behaviors of Gan-Based Green Light-Emitting Diodes

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

Efficiency Droop Effects of GaN-based Light-Emitting Diodes on the Performance of Code Division Multiple Access Visible-Light Communication System

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

On the Efficiency Droop of Top-Down Etched Ingan/Gan Nanorod Light Emitting Diodes under Optical Pumping

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Practicable Alleviation Of Efficiency Droop Effect Using Surface Plasmon Coupling In Gan-Based Light Emitting Diodes