Abstract:Light-emitting diodes (LEDs) are widely used as next-generation light sources because of their various advantages. However, their luminous efficiency is remarkably low at the green-emission wavelength. The luminous efficiencies of InGaN/GaN quantum wells (QWs) significantly decrease with increasing indium content in the green wavelength region, mainly owing to the quantum-confined Stark effect (QCSE). This green gap problem can be solved using QWs grown on semi-polar GaN substrates, such as the {11–22} planes, to reduce the QCSE. We propose that the use of surface plasmons (SPs) is a promising way to improve the light emission efficiency of light-emitting materials such as InGaN/GaN QWs. SP resonance increases the spontaneous emission rates of the excited states, causes a relative reduction in non-radiative relaxation, and ultimately increases the internal quantum efficiencies. In this study, the light emissions of InGaN/GaN QWs grown on polar and semi-polar GaN were investigated using micro-photoluminescence (PL). We successfully enhanced the light emission of semi-polar GaN via SP resonance. The PL peak intensities and wavelengths were mapped and compared to determine the underlying mechanisms. We also measured the emission lifetimes by time-resolved PL and interpreted the detailed mechanism of SP-enhanced emissions. It was found that SP resonances can control not only the emission efficiency but also the exciton dynamics, such as exciton localization effects, QCSE screening, and defect level saturation. We conclude that the green gap problem can be solved by SP-enhanced light emission in semipolar InGaN/GaN.

What problem does this paper attempt to address?

The problem this paper attempts to address is: How to enhance the luminous efficiency of semi-polar InGaN/GaN quantum wells (QWs) through surface plasmon resonance (SPR) to solve the "green gap" issue in green light-emitting diodes (LEDs). ### Specific Problem Background: 1. **Green Gap Issue**: Among the three primary colors of visible light, the luminous efficiency of red and blue LEDs is approximately 50% and 80%, respectively, while the luminous efficiency of green LEDs is only about 30%. This is mainly because, in InGaN/GaN semiconductor quantum wells, high indium content leads to lattice mismatch, generating internal electric fields, which in turn induce the quantum confined Stark effect (QCSE), reducing carrier coupling efficiency and luminous efficiency. 2. **Advantages of Semi-Polar Planes**: Growing InGaN/GaN quantum wells on semi-polar planes can reduce QCSE, thereby improving luminous efficiency. For example, the {11-22} plane can reduce QCSE more effectively than the commonly used {0001} plane (c-plane). 3. **Role of Surface Plasmon Resonance**: Surface plasmon resonance can enhance the luminous efficiency of luminescent materials by increasing the spontaneous emission rate and reducing non-radiative relaxation, ultimately improving internal quantum efficiency. ### Research Methods: - **Sample Preparation**: Researchers prepared polar and semi-polar InGaN/GaN single quantum well samples using metal-organic vapor phase epitaxy (MOVPE) technology and deposited 50nm thick silver (Ag) or aluminum (Al) films on the sample surfaces. - **Photoluminescence (PL) Measurement**: The luminescent properties of the samples, including the spatial distribution and temporal evolution of PL peak intensity and wavelength, were studied using fluorescence microscopy and time-resolved PL measurements. ### Main Findings: - **Blue Emission Samples**: - In polar samples with Ag and Al coatings, the PL peak intensity increased by approximately 2 times and 3 times, respectively. - In semi-polar samples, the PL peak intensity increased by approximately 4 times and 3.5 times, respectively. - SP resonance not only enhanced the emission intensity but also affected the wavelength distribution of the PL peaks. - **Green Emission Samples**: - The PL spectrum of polar samples was almost unaffected by Ag and Al coatings. - The PL spectrum of semi-polar samples showed a significant red shift under Ag coating and a significant blue shift under Al coating. - The PL lifetime of semi-polar samples was significantly shortened under metal coatings, indicating a significant impact of SP resonance on the emission mechanism. ### Conclusion: - **Solution to the Green Gap Issue**: Utilizing surface plasmon resonance on semi-polar InGaN/GaN quantum wells can effectively enhance luminous efficiency, addressing the green gap issue. - **Mechanism Explanation**: SP resonance increases internal quantum efficiency by enhancing the spontaneous emission rate and reducing non-radiative relaxation. Additionally, SP resonance can control exciton dynamics, such as exciton localization, QCSE screening, and defect saturation, further optimizing luminescent performance. In summary, this paper demonstrates through experimental and theoretical analysis the effectiveness of surface plasmon resonance in improving the luminous efficiency of semi-polar InGaN/GaN quantum wells, providing new insights and technical approaches to solving the green gap issue.

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