Abstract:We proposed and demonstrated an integrated high energy efficient and high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with combined metasurface polarizing converter and polarizer system. It is different from those conventional polarized light emissions generated with plasmonic metallic grating in which at least 50% high energy loss occurs inherently due to high reflection of the transverse electric (TE) component of an electric field. A reflecting metasurface, with a two dimensional elliptic metal cylinder array (EMCA) that functions as a half-wave plate, was integrated at the bottom of a LED such that the back-reflected TE component, that is otherwise lost by a dielectric/metal bi-layered wire grids (DMBiWG) polarizer on the top emitting surface of the LED, can be converted to desired transverse magnetic (TM) polarized emission after reflecting from the metasurface. This significantly enhances the polarized light emission efficiency. Experimental results show that extraction efficiency of the polarized emission can be increased by 40% on average in a wide angle of ±60° compared to that with the naked bottom of sapphire substrate, or 20% compared to reflecting Al film on the bottom of a sapphire substrate. An extinction ratio (ER) of average value 20 dB within an angle of ±60° can be simultaneously obtained directly from an InGaN/GaN LED. Our results show the possibility of simultaneously achieving a high degree of polarization and high polarization extraction efficiency at the integrated device level. This advances the field of GaN LED toward energy efficiency, multi-functional applications in illumination, display, medicine, and light manipulation.

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

Unidirectional Luminescence from Quantum Well Metasurfaces

Optimizing Polarization Selective Unidirectional Photoluminescence from Phased‐Array Metasurfaces

Surface lattice resonances for beaming and outcoupling green μ LEDs emission

High-output power GaN-LED based on surface plasmon enhancement

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

Metasurface Integrated High Energy Efficient and High Linearly Polarized InGaN/GaN Light Emitting Diode.

Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Combining Surface Plasmonic and Light Extraction Enhancement on InGaN Quantum-Well Light-Emitters.

Highly efficient optical transition between excited states in wide InGaN quantum wells

Manipulation of Quantum Dot Emission with Semiconductor Metasurfaces Exhibiting Magnetic Quadrupole Resonances.

High efficient linearly polarized light emission from InGaN/GaN LED with patterned nanostructures

High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of Ag nanoparticles and dielectric thin film