Abstract:Ultra-compact, low-loss, fast, and reconfigurable optical components, enabling manipulation of light by light, could open numerous opportunities for controlling light on the nanoscale. Nanostructured all-dielectric metasurfaces have been shown to enable extensive control of amplitude and phase of light in the linear optical regime. Among other functionalities, they offer unique opportunities for shaping the wave front of light to introduce the orbital angular momentum (OAM) to a beam. Such structured light beams bring a new degree of freedom for applications ranging from spectroscopy and micromanipulation to classical and quantum optical communications. To date, reconfigurability or tuning of the optical properties of all-dielectric metasurfaces have been achieved mechanically, thermally, electrically or optically, using phase-change or nonlinear optical materials. However, a majority of demonstrated tuning approaches are either slow or require high optical powers. Arsenic trisulfide (As$_2$S$_3$) chalcogenide glass offering ultra-fast and large $\chi^{(3)}$ nonlinearity as well as a low two-photon absorption coefficient in the near and mid-wave infrared spectral range, could provide a new platform for the realization of fast and relatively low-intensity reconfigurable metasurfaces. Here, we design and experimentally demonstrate an As$_2$S$_3$ chalcogenide glass based metasurface that enables reshaping of a conventional Hermite-Gaussian beam with no OAM into an OAM beam at low-intensity levels, while preserves the original beam's amplitude and phase characteristics at high-intensity levels. The proposed metasurface could find applications for a new generation of optical communication systems and optical signal processing.

Unidirectional Luminescence from Quantum Well Metasurfaces

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

Optimizing Polarization Selective Unidirectional Photoluminescence from Phased‐Array Metasurfaces

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Surface lattice resonances for beaming and outcoupling green μ LEDs emission

Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation

Manipulation of Quantum Dot Emission with Semiconductor Metasurfaces Exhibiting Magnetic Quadrupole Resonances.

Unidirectional Chiral Emission via Twisted Bi-layer Metasurfaces

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Van der Waals contacted MoO x staked ZnO/GaN vertical heterostructured ultraviolet light emitting diodes.

Tunable unidirectional nonlinear emission from transition-metal-dichalcogenide metasurfaces

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Directional emissions from perovskite nanocrystals thin film enabled by metasurface integration through one step spin-coating process

Unidirectional unpolarized luminescence emission via vortex excitation

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Sub picosecond steering of ultrafast incoherent emission from semiconductor metasurfaces

Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

Resonant structure for improved directionality and extraction of single photons

Reconfiguring structured light beams using nonlinear metasurfaces