Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

Metasurface Integrated High Energy Efficient and High Linearly Polarized InGaN/GaN Light Emitting Diode.

High efficient linearly polarized light emission from InGaN/GaN LED with patterned nanostructures

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Characterization of GaInN/GaN layers for green emitting laser diodes

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

High-power Hybrid GaN-based Green Laser Diodes with ITO Cladding Layer

High-speed GaN-based Laser Diode with Modulation Bandwidth Exceeding 5 GHz for 20 Gbps Visible Light Communication

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Design and Growth of GaN-based Blue and Green Laser Diodes

Polarized GaN-based LED with an Integrated Multi-Layer Subwavelength Structure.

Double-sided asymmetric metasurfaces achieving sub-microscale focusing from a GaN green laser diode

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications