Abstract:We proposed and demonstrated an integrated high energy efficient and high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with combined metasurface polarizing converter and polarizer system. It is different from those conventional polarized light emissions generated with plasmonic metallic grating in which at least 50% high energy loss occurs inherently due to high reflection of the transverse electric (TE) component of an electric field. A reflecting metasurface, with a two dimensional elliptic metal cylinder array (EMCA) that functions as a half-wave plate, was integrated at the bottom of a LED such that the back-reflected TE component, that is otherwise lost by a dielectric/metal bi-layered wire grids (DMBiWG) polarizer on the top emitting surface of the LED, can be converted to desired transverse magnetic (TM) polarized emission after reflecting from the metasurface. This significantly enhances the polarized light emission efficiency. Experimental results show that extraction efficiency of the polarized emission can be increased by 40% on average in a wide angle of ±60° compared to that with the naked bottom of sapphire substrate, or 20% compared to reflecting Al film on the bottom of a sapphire substrate. An extinction ratio (ER) of average value 20 dB within an angle of ±60° can be simultaneously obtained directly from an InGaN/GaN LED. Our results show the possibility of simultaneously achieving a high degree of polarization and high polarization extraction efficiency at the integrated device level. This advances the field of GaN LED toward energy efficiency, multi-functional applications in illumination, display, medicine, and light manipulation.

Double-sided asymmetric metasurfaces achieving sub-microscale focusing from a GaN green laser diode

Subwavelength Focusing by a Micro/nanofiber Array.

Acoustic Focusing by a Double Layered Acoustic Grating

Dual-layered metasurfaces for asymmetric focusing

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

Beam Shaping of Edge-Emitting Diode Lasers Using a Single Double-Axial Hyperboloidal Micro-Lens.

High-angle deflection of metagrating-integrated laser emission for high-contrast microscopy

Dual-Band Light Focusing Using Stacked Graphene Metasurfaces

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

Metasurface integrated Vertical Cavity Surface Emitting Lasers for programmable directional lasing emissions

Metasurface Integrated High Energy Efficient and High Linearly Polarized InGaN/GaN Light Emitting Diode.

Design of beam shaping and focusing metasurface device based on G-S algorithm

Ultrathin Flat Parabolic Reflector Based on Gradient Metasurface

Broadband Beam Deflector for GaN Based Micro-LED with a Phase-Gradient Metasurface in Entire Visible Spectrum

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Surface lattice resonances for beaming and outcoupling green μ LEDs emission

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

High-Efficiency and Large-Angle Homo-Metagratings for the Near-Infrared Region

Subwavelength focusing and experimental detection of large-scale metallic multi-annular metasurfaces

Optical Focusing Based on the Planar Metasurface Reflector with Application to Trapping Cold Molecules