Abstract:AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

Cathodoluminescence studies of point defects in aluminum nitride

Critical Point Transitions of Wurtzite AlN in the Vacuum–ultraviolet Spectral Range

Deep‐ultraviolet luminescence properties of AlN

Photoluminescence and Its Time Evolution of AlN Thin Films

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Temperature Dependence of the Optical Properties in Hexagonal AlN

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Optical Properties of AlInN Thin Films

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd