Direct Determination of the Silicon Donor Ionization Energy in Homoepitaxial Aln from Photoluminescence Two-Electron Transitions

B. Neuschl,K. Thonke,M. Feneberg,R. Goldhahn,T. Wunderer,Z. Yang,N. M. Johnson,J. Xie,S. Mita,A. Rice,R. Collazo,Z. Sitar

DOI: https://doi.org/10.1063/1.4821183

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission band, 76.6 meV below the free excitonic emission, with the luminescence of excitons bound to neutral silicon proving the identity as a two-electron transition. The assignment is confirmed by temperature dependent photoluminescence investigations. We find a donor ionization energy of (63.5 ± 1.5) meV for silicon in AlN.