Abstract:Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+nSiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

Optical Identification of Silicon As a Shallow Donor in MOVPE Grown Homoepitaxial AlN

Direct Determination of the Silicon Donor Ionization Energy in Homoepitaxial Aln from Photoluminescence Two-Electron Transitions

Deep‐ultraviolet luminescence properties of AlN

On compensation in Si-doped AlN

Sharp Bound and Free Exciton Lines from Homoepitaxial AlN

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

The Role of the Carbon-Silicon Complex in Eliminating Deep Ultraviolet Absorption in Aln

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC

Growth of Aluminum Nitride on a Silicon Nitride Substrate for Hybrid Photonic Circuits

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition