Abstract:Attaining low-resistivity AlxGa1–xN layers is one keystone to improve the efficiency of light-emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of AlxGa1–xN/Ge samples with 0 ≤ x ≤ 1, and a nominal doping level in the range of 1020 cm–3, together with the measurement of Ge concentration and its spatial distribution down to the nanometer scale. AlxGa1–xN/Ge samples with x ≤ 0.2 do not present any sign of inhomogeneity. However, samples with x > 0.4 display μm-size Ge crystallites at the surface. Ge segregation is not restricted to the surface: Ge-rich regions with a size of tens of nanometers are observed inside the AlxGa1–xN/Ge layers, generally associated with Ga-rich regions around structural defects. With these local exceptions, the AlxGa1–xN/Ge matrix presents a homogeneous Ge composition which can be significantly lower than the nominal doping level. Precise measurements of Ge in the matrix provide a view of the solubility diagram of Ge in AlxGa1–xN as a function of the Al mole fraction. The solubility of Ge in AlN is extremely low. Between AlN and GaN, the solubility increases linearly with the Ga mole fraction in the ternary alloy, which suggests that the Ge incorporation takes place by substitution of Ga atoms only. The maximum percentage of Ga sites occupied by Ge saturates around 1%. The solubility issues and Ge segregation phenomena at different length scales likely play a role in the efficiency of Ge as an n-type AlGaN dopant, even at Al concentrations where Ge DX centers are not expected to manifest. Therefore, this information can have direct impact on the performance of Ge-doped AlGaN light-emitting diodes, particularly in the spectral range for disinfection (≈260 nm), which requires heavily doped alloys with a high Al mole fraction.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c19174?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c19174</a>.XRD measurements of AL100GE2 and APT analysis of AL20GE2C (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c19174/suppl_file/am0c19174_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Progress in efficient doping of Al-rich AlGaN

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Doping and compensation in heavily Mg doped Al-rich AlGaN films

On compensation in Si-doped AlN

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

High conductivity and low activation energy in p-type AlGaN

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Monolayer-scale AlN/GaN Digital Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy