Abstract:Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+nSiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

The Role of the Carbon-Silicon Complex in Eliminating Deep Ultraviolet Absorption in Aln

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

On compensation in Si-doped AlN

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Optical Identification of Silicon As a Shallow Donor in MOVPE Grown Homoepitaxial AlN

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Deep‐ultraviolet luminescence properties of AlN

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Cathodoluminescence studies of point defects in aluminum nitride

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Cathodoluminescence investigation of defect states in n- and p-type AlN

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications