Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Sharp Bound and Free Exciton Lines from Homoepitaxial AlN

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Optical Identification of Silicon As a Shallow Donor in MOVPE Grown Homoepitaxial AlN

Excitonic Emission Dynamics in Homoepitaxial AlN Films Studied Using Polarized and Spatio-Time-resolved Cathodoluminescence Measurements

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Deep‐ultraviolet luminescence properties of AlN

Direct Determination of the Silicon Donor Ionization Energy in Homoepitaxial Aln from Photoluminescence Two-Electron Transitions

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Vacuum Rabi Splitting of Exciton–Polariton Emission in an AlN Film

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Cathodoluminescence investigation of defect states in n- and p-type AlN

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Photoluminescence of N‐inn with Low Electron Concentrations

Enhanced Electron Field Emission from Oriented Columnar AlN and Mechanism

Acceptor States in the Photoluminescence Spectra of N-Inn

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Temperature Dependence of the Optical Properties in Hexagonal AlN