Enhanced Electron Field Emission from Oriented Columnar AlN and Mechanism

A. P. Huang,Paul K. Chu,X. L. Wu
DOI: https://doi.org/10.1063/1.2216353
IF: 4
2006-01-01
Applied Physics Letters
Abstract:(002) oriented AlN thin films with a columnar microstructure fabricated by vapor phase deposition with a sample bias exhibit excellent field emission properties. The field emission current density increases with smaller film thickness, and at a thickness of 400nm, the current density reaches 9.9μA∕cm2 and the turn-on field is close to 5V∕μm. Atomic force microscopy discloses nanoscale protrusions on the surface that greatly expand the emission area and efficiency. The Fowler-Nordheim plot reveals a linear dependence under low electric field (<17V∕μm), suggesting that the emission current originates from the quantum tunneling effect.
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