Abstract:We attain N-polar and Al-polar AlN thin films on Si(111) substrates by plasma-assisted molecular beam epitaxy. The polarity of AlN epilayers has been validated by wet chemical etching using tetramethylammonium hydroxide and by the direct cross-sectional observation of atomic stacking under high-angle annular dark-field scanning transmission electron microscopy. For the 290 nm-thick as-grown N-polar AlN epilayer, x-ray diffraction (XRD) (002) and (102) omega rocking curve peak full width half maximums (FWHMs) are 475 and 1177 arcsec, and the surface mean square roughness (RMS) is 0.30 nm. We flipped the polarity using the metal-flux-modulation-epitaxy (MME) strategy. The MME strategy promotes anti-phase boundaries (APBs) on the { 2201 } crystalline planes instead of commonly observed lateral planar APBs in AlN epilayers. Merging of the tilted APBs at similar to 50 nm leads to a complete Al-polar surface. For the 180 nm-thick Al-polar AlN epilayer, XRD (002) and (102) peak FWHMs are 1505 and 2380 arcsec, and the surface RMS is 1.41 nm. Strain analysis by XRD and Raman spectroscopy indicates a uniform tensile strain of 0.160% across the N-polar AlN epilayer surface and a strain distribution of 0.113%-1.16% through the epilayer. In contrast, the Al-polar AlN epilayer exhibits a much broader tensile strain distribution of 0.482%-2.406% along the growth direction, potentially due to the interaction of polarity inversion and strain relaxation.

Vacuum Rabi Splitting of Exciton–Polariton Emission in an AlN Film

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Excitonic Emission Dynamics in Homoepitaxial AlN Films Studied Using Polarized and Spatio-Time-resolved Cathodoluminescence Measurements

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Room-temperature Polariton Lasing in GaN Microrods with Large Rabi Splitting

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Large Rabi Splitting in InGaN Quantum Wells Microcavity at Room Temperature

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Giant Vacuum-Field Rabi Splitting of Intersubband Transitions in Multiple Quantum Wells

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Nucleation and growth of (10 ͞ 11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

Single-Photon Emission from Point Defects in Aluminum Nitride Films

Polarity Control and Growth of Lateral Polarity Structures in Aln

Sharp Bound and Free Exciton Lines from Homoepitaxial AlN

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Critical Point Transitions of Wurtzite AlN in the Vacuum–ultraviolet Spectral Range