Abstract:We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm<sup>2</sup> is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indicating a sharp interface amid the active region. The excitonic localization was revealed and studied by the photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy at temperatures ranging from 15 K to RT. At 15 K, the multiple-component PL decay curves with the decay time varying from 62.6 to 2.77 ns at different energies confirmed the localized excitons. The peak energy of the temperature-dependent PL spectra exhibited the "S-shape" behavior; and the weak exciton localization with a small localization energy of 14.3 meV was observed. Therefore, even in the low temperature region, the escape possibility of excitons increased as the temperature rose. As a result, the fwhm of the emission spectra changed significantly when the temperature was below 150 K. Above 150 K, the PL decay shape changed from the two-component exponential decay to the single exponential decay, indicating complete delocalization of excitons. The work demonstrates the weak localization and thus smooth interface in the GaN/AlN active region, which are desirable for DUV lasers operating at RT.This article has not yet been cited by other publications.

Large Rabi Splitting in InGaN Quantum Wells Microcavity at Room Temperature

Large Rabi Splitting Obtained in Ag-WS2 Strong-Coupling Heterostructure with Optical Microcavity at Room Temperature

Room-temperature Polariton Lasing in GaN Microrods with Large Rabi Splitting

Room-temperature vacuum Rabi splitting with active control in two-dimensional atomic crystals

Theoretical Optimization of Inhomogeneous Broadening in InGaN/GaN MQWs to Polariton Splitting at Low Temperature

Controllable Coupling Between a Nanomechanical Resonator and a Coplanar-Waveguide Resonator Via a Superconducting Flux Qubit

Two-Photon Rabi Splitting in a Coupled System of a Nanocavity and Exciton Complexes

Coupling of Diamond Nanocrystals to a High-Qwhispering-gallery Microresonator

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Two-round Quasi-Whispering Gallery Mode Exciton Polaritons with Large Rabi Splitting in a GaN Microrod.

Photoluminescence modal splitting via strong coupling in hybrid Au/WS2/GaP nanoparticle-on-mirror cavities

Room-temperature Exciton-Polariton and Photonic Lasing in GaN/InGaN Core-Shell Microrods

Large Rabi splitting energy in resonant quasi-BIC WSe2 metasurfaces

Room-Temperature Strong Light-Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals.

Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Vacuum Rabi Splitting of Exciton–Polariton Emission in an AlN Film

Ultralarge Rabi splitting and broadband strong coupling in a spherical hyperbolic metamaterial cavity

Strong Exciton–photon Coupling and Polariton Lasing in GaN Microrod

Polariton Lasing in InGaN Quantum Wells at Room Temperature