Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization

Maocheng Shan,Yi Zhang,Ming Tian,Rongyu Lin,Jie’an Jiang,Zhihua Zheng,Yongming Zhao,Yi Lu,Zhechuan Feng,Wei Guo,Jiangnan Dai,Changqing Chen,Feng Wu,Xiaohang Li

DOI: https://doi.org/10.1021/acsphotonics.1c00090

IF: 7

2021-04-16

ACS Photonics

Abstract:We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm² is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indicating a sharp interface amid the active region. The excitonic localization was revealed and studied by the photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy at temperatures ranging from 15 K to RT. At 15 K, the multiple-component PL decay curves with the decay time varying from 62.6 to 2.77 ns at different energies confirmed the localized excitons. The peak energy of the temperature-dependent PL spectra exhibited the "S-shape" behavior; and the weak exciton localization with a small localization energy of 14.3 meV was observed. Therefore, even in the low temperature region, the escape possibility of excitons increased as the temperature rose. As a result, the fwhm of the emission spectra changed significantly when the temperature was below 150 K. Above 150 K, the PL decay shape changed from the two-component exponential decay to the single exponential decay, indicating complete delocalization of excitons. The work demonstrates the weak localization and thus smooth interface in the GaN/AlN active region, which are desirable for DUV lasers operating at RT.This article has not yet been cited by other publications.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology