Abstract:AlGaN-based vertical-cavity surface-emitting lasers (VCSELs) have garnered recent interest due to their superior material properties and device benefits. Nevertheless, AlGaN-based VCSELs are extremely difficult to realize due to numerous technical limitations associated with both material epitaxial growth and chip fabrication. This study fabricated a high-quality AlGaN multiple quantum wells (MQWs) structure using epitaxial lateral overgrowth and analyzed it using X-ray diffraction (XRD) and photoluminescence (PL) measurements. With an edge dislocation density (DD) of 10 9 cm −2 , XRD measurements reveal that the AlN template is nearly fully relaxed. The subsequent AlGaN/AlN superlattice (SL) layer is introduced to decrease the edge DD, and the edge DD in the MQWs is ∼10 8 cm −2 . According to PL measurements, the internal quantum efficiency of the MQWs is as high as 62%, and radiative recombination dominated the emission of the MQWs at room temperature. Using these epitaxial wafers, ultraviolet radiation C (UVC) VCSELs were fabricated using various techniques, including laser lift-off (LLO) and chemical mechanical polishing (CMP). The crystallinity of the MQWs was unaffected by sapphire substrate removal using LLO. After removing the sapphire substrate using LLO and CMP, UVC surface-stimulated emission was observed in MQWs. AlGaN-based UVC VCSELs with lasing wavelengths of 275.91, 276.28, and 277.64 nm have been fabricated. The minimum threshold for UVC VCSELs is 0.79 MW cm −2 , which is a record low.

Stimulated Emission At 340 Nm From Algan Multiple Quantum Well Grown Using High Temperature Aln Buffer Technologies On Sapphire

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

E-beam Pumped Mid-Ultraviolet Sources Based on AlGaN Multiple Quantum Wells Grown by MBE

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Enhancement the Deep-Ultraviolet Emission from the Mg-doped AlGaN/AlN Multiple Quantum Wells Pumped by an Electron Beam

Optical Properties of Diffused AlGaAs/GaAs Multiple Quantum Wells and Their Applications in High Power Laser

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 Nm

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

An Electrically Injected Algan Nanowire Laser Operating In The Ultraviolet-C Band

Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template