Abstract:The achievement of high-efficiency AlGaN-based deep ultraviolet (DUV) emitters is greatly limited by the poor crystalline quality and negligible carrier localization effect of the Al-rich AlGaN quantum structures. Herein, we propose solving this long-standing issue via surface engineering. By changing the misorientations of sapphire substrates, Al(Ga)N epilayers obtained different step heights and shapes. Accordingly, surface-mediated dislocation climbing and surface adatom incorporation behaviors can be well regulated. Profiting from macrostep-mediated dislocation climbing behavior, dislocation inclination and interaction become more frequent. Thus, for the 1 mu m-thick AlN epilayers grown on C/A-4(degrees) and C/M-4(degrees) sapphire substrates, only a few mixed-type dislocations are found. However, this process also continuously induces tensile stress. To alleviate tensile stress and pursue efficient DUV emission, we constructed nominal quantum wells on 400 nm ultrathin step-bunched AlN epilayers. Interestingly, the different incorporation behaviors of Al and Ga adatoms induce the formation of quantum wells at the macrostep terraces and quantum wires at the macrostep edges, respectively. The excellent crystalline quality of the AlN/sapphire templates and the dominant luminescence of the high-density self-organized quantum wire array lead to a high internal quantum efficiency of 70%. This work paves the way for achieving high-efficiency devices on a low-cost ultrathin platform.

E-beam Pumped Mid-Ultraviolet Sources Based on AlGaN Multiple Quantum Wells Grown by MBE

E-beam Pumped Ultraviolet Light Sources Based on Ultrathin GaN Quantum Wells (conference Presentation)

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Enhancement the Deep-Ultraviolet Emission from the Mg-doped AlGaN/AlN Multiple Quantum Wells Pumped by an Electron Beam

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

Stimulated Emission At 340 Nm From Algan Multiple Quantum Well Grown Using High Temperature Aln Buffer Technologies On Sapphire

High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Electron-Beam-Pumped UVC Emitters Based on an (al,ga)n Material System

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

High-Output-Power Ultraviolet Light Source from Quasi-2d Gan Quantum Structure

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Single Peak Deep Ultraviolet Emission and High Internal Quantum Efficiency in AlGaN Quantum Wells Grown on Large Miscut Sapphire Substrates

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile