Abstract:The paper reports on heterostructures for mid-ultraviolet (UVC) emitters with multiple (up to 400 periods) and single two-dimensional (2D)-GaN/AlN quantum disks/quantum wells with a nominal thickness below the critical thickness of ~2 monolayers (MLs) characterizing the transition of the 2D growth mode to 3D.The structures were grown by plasma-assisted molecular beam epitaxy (PA MBE) using low growth temperatures (~690C) in a wide range of gallium and activated nitrogen flux ratios Ga/N2* = 0.6  2.2 on various AlN/csapphire templates fabricated either by PA MBE or MOCVD.This made it possible to vary the surface topography from a 3D type under nitrogen-rich conditions to various types of 2D topographies in the structures grown under metal(Ga)-rich conditions.The absence of a Stranski-Krastanov transition in the latter structures was confirmed by a streaky RHEED pattern throughout the growth of QWs and barrier layers.The growth runs were monitored also by multi-beam optical stress sensor, which revealed an unusual stress relaxation in the ML-thick GaN/AlN heterostructures.Structural properties of GaN/AlN heterostructures were studied using X-ray diffraction analysis, including measurement of X-ray reflectance curves, atomic force microscopy, and high-resolution transmission microscopy.The results of these studies, together with the measurements of photoluminescence spectra, both cw and time-resolved, made it possible to suggest the formation of twodimensional GaN quantum disks with a thickness of either 1 or 2 ML and different lateral sizes on the stepped surface of the AlN barrier layers, which can lead to effective carrier localization.Moreover, we demonstrate a unique functional property of these atomically thin QW to maintain stable excitons, resulting in a particularly high radiation yield at room temperature.As a result, the emission energy (wavelength) from GaN/AlN 400QW structures could be varied from 5.21 eV (238 nm) to 4.68 eV (265 nm) and was connected with a simultaneous increased of charge carrier localization.Using electron-beam pumping with a plasma cathode ferroelectric electron gun ensuring a maximum pulse current of 2 A at an electron energy of 12.5 keV, a maximum output optical power of 50 W was achieved for the 265 nm structure, while the structure emitting at 238 nm demonstrated a power of 10 W, as shown in Fig. 1.In addition, we discussed the optical properties of cylindrical nanorods with diameters from 50 to 5000 nm, fabricated by the topdown technology from ML-thick GaN/AlN single QWs using a combination of wet and reactive ion etching.Photoluminescence measurements in an ultra-small QW region enclosed in a nanorod revealed narrow lines of individual excitons localized on potential fluctuations attributed to GaN quantum nano-disks 2-3 MLs high, which appear in a QW with an nominal thickness of 1.5 ML.A model that takes into account dark and bright exciton states was used to explain the features in the PL spectra, including their behavior with increasing temperature.This research was funded by

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

2D-Gan/aln Monolayer Quantum Disks for Mid-Ultraviolet Emitters

Electron-Beam-Pumped UVC Emitters Based on an (al,ga)n Material System

High-Output-Power Ultraviolet Light Source from Quasi-2d Gan Quantum Structure

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

E-beam Pumped Mid-Ultraviolet Sources Based on AlGaN Multiple Quantum Wells Grown by MBE

E-beam Pumped Ultraviolet Light Sources Based on Ultrathin GaN Quantum Wells (conference Presentation)

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

AlGaN/AlN Stranski-Krastanov quantum dots for highly efficient electron beam pumped emitters: The role of miniaturization and composition to attain far UV-C emission

Droop-free AlxGa1-xN/AlyGa1-yN Quantum-Disks-in-nanowires Ultraviolet LED Emitting at 337 Nm on Metal/silicon Substrates.

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources

High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Stimulated Emission At 340 Nm From Algan Multiple Quantum Well Grown Using High Temperature Aln Buffer Technologies On Sapphire

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW