226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW

Tim Kolbe,Hyun Kyong Cho,Sylvia Hagedorn,Jens Rass,Jan Ruschel,Sven Einfeldt,Markus Weyers
DOI: https://doi.org/10.1002/pssr.202400092
2024-05-10
physica status solidi (RRL) - Rapid Research Letters
Abstract:Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary
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