Abstract:Low-dimensional Ga 2 O 3 single-crystals have caused widespread attentions in the potential of developing ultraviolet light sources due to its ultrabroad bandgap, low-budget, high thermally stable, high breakdown voltage and others. Herein, we exhibit a significant route to construct one-dimensional Ga 2 O 3 microwire heterojunction deep-ultraviolet light-emitting diode (LED). The resulting electroluminescence is positioned at 326 nm with a narrow linewidth of about 22.5 nm, which is the shortest wavelengths once published for the Ga 2 O 3 -related light sources. In the well-fabricated LED, an intermediate AlN layer enables appropriately to manipulate band alignment of n-Ga 2 O 3 /p-GaN heterojunction, thus achieving efficient confinement of electron–holes spreading and radiative recombination within the Ga 2 O 3 microwire active medium. Benefited from surface-modified Pt nanoparticles, the LED's electroluminescence efficiency and brightness can be plasmonically boosted. More importantly, the peak energy at 3.8 eV obtained under forward bias, which is smaller than the Ga 2 O 3 bandgap, could be resulted from radiative recombination of weakly-bounded electron–holes inside the Ga 2 O 3 microwires. Therefore, the Ga 2 O 3 monocrystalline wires synthesized using high-temperature carbothermal reduction, are expected as promising-looking candidates to develop environmentally friendly, easy miniaturization, highly-stable deep-ultraviolet light sources and photonic devices.

MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

A 326 nm pure ultraviolet light sources achieved in a Ga 2 O 3 microwire heterojunction through interface optimization and surface-modification

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

Droop-free AlxGa1-xN/AlyGa1-yN Quantum-Disks-in-nanowires Ultraviolet LED Emitting at 337 Nm on Metal/silicon Substrates.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Photonic Crystal Tunnel Junction Deep Ultraviolet Light Emitting Diodes with Enhanced Light Extraction Efficiency

395 Nm GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates with a High Wall-Plug Efficiency of 520%@350 Ma