Abstract:Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining attention as a safe and sustainable disinfection solution for occupied spaces. Here, we delve into the extension of the AlxGa1-xN/AlN quantum dot (QD) technology towards the far UV-C range, which presents various challenges associated with the reduction of the lattice mismatch and band offset when Al is incorporated in the QDs. We explore the structural and optical impact of increasing the Al content through the increase of the Al flux and eventual correction of the Ga flux to maintain a constant metal/N ratio. We also examine the impact of extreme miniaturization of the QDs, achieved through a reduction of their growth time, on the spectral behavior and internal quantum efficiency (IQE). The high Al content results in QDs with a reduced aspect ratio (height/diameter) and thicker wetting layer when compared to the GaN/AlN system. Self-assembled QDs grown with a metal/N ratio ranging from 0.5 to 0.8 show an IQE around 50%, independent of the Al content (up to 65%) or emission wavelength (300-230 nm). However, samples emitting at wavelengths below 270 nm exhibit a bimodal luminescence associated with inhomogeneous in-plane emission attributed to fluctuations of the QD shape associated with extended defects. Reducing the QD size exacerbates the bimodality without reducing the emission wavelength. The power efficiencies under electron beam pumping range from 0.4% to 1%, with clear potential for improvement through surface treatments that enhance light extraction efficiency.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the development of highly efficient electron - beam - pumped emitters in the far - UV - C region (Far UV - C, with a wavelength below 240 nanometers). Specifically, the paper explores the technical challenges and solutions for achieving AlGaN/AlN quantum dot (QD) emission in the far - UV - C region through miniaturization and composition adjustment. When traditional ultraviolet lamps are used for disinfection, their radiation range is between 255 - 270 nanometers, presenting a relatively high risk of cancer and cataracts. Therefore, researchers are focusing on developing safer and more sustainable solid - state far - UV - C light sources that can be used in occupied environments while effectively disinfecting. The main technical challenges mentioned in the paper include: 1. **Reduction of lattice mismatch and bandgap offset**: When aluminum is incorporated into quantum dots, the issues of lattice mismatch and reduced bandgap offset need to be addressed, which will affect the morphology of quantum dots and carrier confinement. 2. **Increase in point defect density**: In alloys containing aluminum, the density of point defects (such as vacancies and contaminants) will increase. 3. **Effect of growth temperature**: In order to grow aluminum - containing nitrides, it is necessary to operate at a lower temperature, which may lead to the generation of structural defects. To solve these problems, researchers have explored methods of maintaining a constant metal/N ratio by increasing the aluminum flux and adjusting the gallium flux, as well as the impact of extreme miniaturization on spectral behavior and internal quantum efficiency (IQE) by reducing the growth time of quantum dots. Research shows that quantum dots with a high aluminum content can reach an IQE of approximately 50%, but samples with a wavelength below 270 nanometers show bimodal luminescence, which is related to changes in the shape of quantum dots. In addition, reducing the size of quantum dots exacerbates the bimodal phenomenon but does not reduce the emission wavelength. The power efficiency under electron - beam pumping is between 0.4% and 1%, indicating that there is great potential for improvement by increasing the light extraction efficiency through surface treatment.

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