Abstract:We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (11 (2) over bar2) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial lateral overgrowth GaN with (11 (2) over bar2) facets on the structural and optical properties were investigated via photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two distinguish peaks attributed to quantum wells with wide range wavelength. Raman E2 (high) signals revealed a partially relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time (equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (11 (2) over bar2) facets. Temperature dependence of PL decay time tau(PT) shows an interesting behavior of tPL with temperature.

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