Abstract:InGaN/GaN multiple quantum well (MQW) truncated pyramids with multiwavelength emission were successfully fabricated by means of a simple and low-cost regrowth method on a GaN dodecagonal pyramid template. This template obtained by H3PO4 etching the N-ploar GaN bulk material showed six pairs of alternating Ga-polar and N-polar edges. The luminescence properties of the InGaN/GaN MQW structure were investigated by both photoluminescence (PL) and spatially resolved cathodoluminescence (CL) with scanning electron microscopy (SEM) measurements. It was found that the emission wavelength of InGaN/GaN MQWs was very broad and red-shifted from the bottom to the top of the pyramid. The high emission intensity around 420–480 nm originated from the edges and sidewall of the pyramids. Additionally, longer emissions from the (1̅1̅22̅) facet MQWs and the periphery of the micron-sized truncated pyramid (TP) were observed, consisting of multiple peaks ranging from 460 to 540 nm. Furthermore, the growth model of MQWs on GaN dodecagonal pyramid templates was established to explain the nonuniformity in distribution and flower- or star-like pattern formation on pyramid sidewalls. It took into account the combined effects of strain distribution at the InGaN/GaN heterostructure interface, different incorporation rates of Ga and In atoms at Ga- or N-polar surfaces, and different diffusion lengths of Ga and In adatoms on GaN template lateral facets. The proposed structure, due to its low-cost and easy fabrication process, could be a promising candidate for highly efficient broadband visible light-emitting devices.

Enhancement of Optical Characteristic of InGaN/GaN Multiple Quantum-Well Structures by Self-Growing Air Voids

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays

Study on the Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures

InGaN/GaN multi-quantum-well nanowires and light emitting

Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer