Abstract:Porous GaN nanopyramids, produced through a combination of selective area growth and electrochemical etching, introduce an exciting new alternative to traditional nanostructures. The precisely controlled porosity within these nanostructure templates offers a substantial advancement for nanoscale light emitting devices, enhancing their performance through superior light extraction, effective defect filtration, and optimal strain relaxation. GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices. However, significant progress remains elusive, possibly due to the absence of innovative approaches. Beyond the smaller size of GaN nanostructures, the main interest lies in growing InGaN active layers on semi‐ and non‐polar orientations. Nevertheless, it is evident that while leveraging such a method holds initial promise, this approach may eventually reach its limits, prompting the need for fresh perspectives. In this manuscript, electrochemical etching is utilized to fabricate porous GaN nanopyramids. Given the absence of prior studies on electrochemical etching of GaN nanostructures, its etching behavior is investigated, revealing its selectivity concerning doping concentration and geometry. Furthermore, how the choice of electrolyte can differently impact the optical response of the etched template is explored. Subsequently, an InGaN/GaN quantum wells shell is grown as the active region. The significance of the approach is evidenced by a tenfold enhancement in photoluminescence emission. Porous nanopyramids demonstrate a higher internal quantum efficiency of 44.7% and faster radiative recombination time. Additionally, finite difference time domain simulation reveals a twofold increase in light extraction efficiency. This research will lead the way toward the development of a new class of nanostructures offering potential advancements in optoelectronic devices.

Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

High-output power GaN-LED based on surface plasmon enhancement

Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Efficiency Enhancement of InGaN Amber MQWs Using Nanopillar Structures

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Porous GaN Nanopyramids: Advancing Beyond Conventional Nanostructures for High‐Brightness InGaN/GaN Quantum Wells Emission

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells