Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Jinqiao Xie,Seiji Mita,Zachary Bryan,Wei Guo,Lindsay Hussey,Baxter Moody,Raoul Schlesser,Ronny Kirste,Michael Gerhold,Ramon Collazo,Zlatko Sitar
DOI: https://doi.org/10.1063/1.4803689
IF: 4
2013-01-01
Applied Physics Letters
Abstract:To unambiguously distinguish lasing from super luminescence, key elements of lasing such as longitudinal cavity modes with narrow line-width, polarized emission, and elliptically shaped far-field pattern, need to be demonstrated at the same time. Here, we show transverse electric polarized lasing at 280.8 nm and 263.9 nm for AlGaN based multi-quantum-wells and double heterojunction structures fabricated on single crystalline AlN substrates. An elliptically shaped far-field pattern was recorded when pumped above threshold. With cavities shorter than 200 μm, well-defined, equally spaced longitudinal modes with line widths as narrow as 0.014 nm were observed. The low threshold pumping density of 84 kW/cm2 suggests that the electrically pumped sub-300 nm ultraviolet laser diodes are imminent.
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