Abstract:We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the heterostructure and serve as strain transition buffers which reduce the mosaicity of the active region and the linewidth of spontaneous emission.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop an efficient electron - beam - pumped ultraviolet laser, especially for AlGaN/GaN heterostructures operating at room temperature. Specifically, the researchers focus on how to improve the carrier collection efficiency by designing an asymmetric graded - index separate confinement heterostructure (GRINSCH), while reducing the potential barrier caused by polarization differences, improving the quality of the material, and reducing the linewidth of spontaneous emission, so as to achieve more efficient laser emission. The paper mentions that the traditional current injection method poses great challenges for realizing AlGaN - based laser diodes. In particular, it is difficult to prepare p - type doped AlGaN materials, and a high doping concentration will lead to a decline in material quality and an increase in absorption loss. Therefore, the researchers explored the possibility of using a high - energy electron beam (5 - 20 keV) as a pumping source. This method not only avoids the selection limitations of doping or electrical contact, but also can improve the radiative recombination efficiency, and allows the device to be more compact. At the same time, the electron beam can penetrate deep into the structure, reducing surface - related losses. In order to optimize the performance of the electron - beam - pumped AlGaN/GaN laser, the researchers designed a series of heterostructures, including the standard separate confinement heterostructure (SCH), the graded - index separate confinement heterostructure (GRINSCH) with a smooth composition transition layer, and the further improved asymmetric GRINSCH. These designs aim to optimize the transmission path of carriers from the generation area to the active area by adjusting the aluminum content and thickness of each layer of material, reduce the recombination of carriers in the non - active area, and ultimately reduce the laser threshold power density and improve the overall performance of the laser.

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

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