Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Stimulated Emission and Optical Gain in AlGaN Heterostructures Grown on Bulk AlN Substrates

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Stimulated Emission at 258 Nm in Aln/Algan Quantum Wells Grown on Bulk Aln Substrates

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Deep-Uv Optical Gain in Algan-Based Graded-Index Separate Confinement Heterostructure

Molecular Beam Epitaxial Growth and Characterization of Al(Ga)N Nanowire Deep Ultraviolet Light Emitting Diodes and Lasers

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Molecular Beam Epitaxy Growth of AlGaN Quantum Wells on 6H-Sic Substrates with High Internal Quantum Efficiency

Stimulated Emission At 340 Nm From Algan Multiple Quantum Well Grown Using High Temperature Aln Buffer Technologies On Sapphire

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

An Electrically Injected Algan Nanowire Laser Operating In The Ultraviolet-C Band

Optoelectronic Devices on AlGaN/GaN HEMT Platform (phys. Status Solidi A 5∕2016)

265 Nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Deep-ultraviolet Emission of AlGaN/AlN Quantum Wells on Bulk AlN

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates