Abstract:AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Temperature Dependence of the Optical Properties in Hexagonal AlN

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Temperature Dependence of Raman Scattering in Defect-Free AlN Nanorods Grown on Multilayer Graphene by Van Der Waals Epitaxy

Raman Spectroscopic Calibrations of Phonon Deformation Potentials in Wurtzitic AlN

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Temperature Dependence of Raman Scattering in AlInN

Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia