Abstract:AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

Temperature Dependence of Raman Scattering in AlInN

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Temperature Dependence of the Aln E1(To) Phonon Decay, Thermal Expansion and Strain Effect in Aln/Sapphire by Infrared Reflection

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Phonon heat conduction in Al1-xScxN thin films

Effects of indium composition x and temperature on the raman phonon properties of InxGa1-x N alloys with high Indium composition

Temperature-dependent Raman Scattering of Silicon Nanowires.

The study of near-resonance Raman scattering of AlInN/AlN/GaN heterostructure

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Growth-microstructure-thermal property relations in AlN thin films

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Temperature Dependence of Raman Scattering in GeSn Films

Investigation of thermal annealing on the characteristics of Sc Al1−N thin films

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Raman scattering study of In xGa 1-xN alloys with low indium compositions