Abstract:Aluminum nitride thin film can be applied as a high-temperature material because of its excellent heat resistance and thermal conductivity, and high mechanical strength. In addition, application and application to surface acoustic wave devices using piezoelectric properties are expected, and it is known as a material that can replace ZnO. To obtain excellent crystal orientation, the residual stress behavior inside the thin film should be fully evaluated and identified. In this study, AlN thin films were deposited by the conventional PM sputtering method and the Two-Facing-Target (TFT) PM sputtering method using BLC glass and quartz glass with different thermal expansion coefficients as substrates. In the process of cooling the fabricated thin film, the effect of the difference in the coefficient of thermal expansion with the substrate on the residual stress of the thin film and the effect of the substrate temperature on the properties of the thin-film structure and the residual stress when the thin film was deposited were investigated. The AlN thin film deposited on the glass substrate by the conventional PM sputtering method showed a crystal structure in which the c -axis was preferentially oriented in the normal direction of the substrate surface, the same as the AlN thin film produced by the two-facing-target PM sputtering method. The AlN thin film deposited on the glass substrate had a crystal structure in which the c -axis was preferentially oriented in the normal direction to the substrate, and the c -axis orientation showed excellent c -axis orientation when the substrate temperature was higher than 523 K. In the case of the quartz glass substrate, the increase of the tensile residual stress was evident as the substrate temperature increased, and the effect of the thermal residual stress was confirmed.

Temperature Dependence of the Aln E1(To) Phonon Decay, Thermal Expansion and Strain Effect in Aln/Sapphire by Infrared Reflection

Temperature Dependence of Raman Scattering in AlInN

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Temperature Dependence Of The Optical Properties Of Alinn

Temperature Dependence of the Optical Properties in Hexagonal AlN

An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Investigation of Surface Acoustic Waves Anisotropy on High-Quality AlN/Sapphire Grown by Hydride Vapor Phase Epitaxy

RETRACTED: Phase Transition and Thermal Expansion of the LaAlO3 Single Crystal at High Temperatures

Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

Growth-microstructure-thermal property relations in AlN thin films

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

Influence of the texture on Raman and X-ray diffraction characteristics of polycrystalline AlN films

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Quasi-Transverse Optical Phonon Mode in Self-Generated Semipolar Aln Grains Embedded in C-Oriented Aln Matrix Grown on Sapphire Using Hydride Vapor Phase Epitaxy

Temperature Dependence of the A1(LO) and E2 (high) Phonons in Hexagonal InN Nanowires

Growth-dependent Phonon Characteristics in InN Thin Films

Development and Characterization of Resonator- and Delay Lines-Based Sensors on AlN/sapphire Substrate for High-Temperature Application

Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods