Abstract:AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

The Role of the Carbon-Silicon Complex in Eliminating Deep Ultraviolet Absorption in Aln

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Temperature Dependence of the Optical Properties in Hexagonal AlN

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

265 Nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

Cathodoluminescence studies of point defects in aluminum nitride

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Direct evidence for carbon incorporation on the nitrogen site in AlN

Critical Point Transitions of Wurtzite AlN in the Vacuum–ultraviolet Spectral Range

Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3on–val Surface Defects

Experimental Evidence Of Large Bandgap Energy In Atomically Thin Aln

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Photoluminescence and Its Time Evolution of AlN Thin Films