Abstract:AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

Direct evidence for carbon incorporation on the nitrogen site in AlN

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Investigation of carbon nitride films by cathodic arc evaporation

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Electron energy loss spectroscopy of amorphous carbon nitride

Probing Carbon Nanoparticles in Cnx Thin Films Using Raman Spectroscopy

Reactions of laser-ablated aluminum atoms with nitrogen atoms and molecules. Infrared spectra and density functional calculations for the AlN2, Al2N, Al2N2, AlN3, and Al3N molecules

First-principle study of nitrogen incorporation in amorphous carbon

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Direct observation of Eu atoms in AlN lattice and the first-principles simulations

Reactions of Laser-Ablated Aluminum Atoms with Nitrogen During Condensation at 10 K. Infrared Spectra and Density Functional Calculations for AlxNy Molecular Species

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

The Role of the Carbon-Silicon Complex in Eliminating Deep Ultraviolet Absorption in Aln

Atomic configuration of nitrogen-doped single-walled carbon nanotubes

Experimental Realization of the Covalent Solid Carbon Nitride

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

Observation of the Long Afterglow in AlN Helices.