Abstract:Effects of rapid thermal annealing (RTA) on the structural properties were investigated in undoped GaN film grown by rf-plasma-assisted molecular beam epitaxy (MBE). Detailed characterizations of the photoluminescence (PL), high-resolution X-ray diffraction and low-frequency noise were conducted on both the as-grown and annealed films. PL and X-ray diffraction measurements showed that the crystallinity of the films improved with RTA at 800 degreesC with significant reduction in the yellow emission. Annealing at 900 degreesC and 1000 degreesC resulted in an increase in the FWHM of the Ti-ray diffraction, indicative of thermal decomposition of the materials. The results are in excellent agreement with our study of low-frequency noise, which demonstrates similar trend in the magnitudes of the Hooge parameters as a function of the annealing temperature, The temperature dependence of the voltage noise power spectra S-nu(f) was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, At the low-frequency range the fluctuation is dominated by 1/f(gamma) noise, and for f > 1 kHz the noise is dominated by G-R noise processes. Our experimental results show that 800 degreesC is the optimal temperature for RTA, which results in substantial improvements in both the optical, structural and noise properties for the material, whereas annealing at 1000 degreesC is found to result in significant material degradation.

EFFECT OF RAPID THERMAL ANNEALING ON THE <font>Mg</font>-DOPED <font>GaN/Si</font> FILM

Effect of rapid thermal annealing on the Mg-doped GaN/Si film

Effects of Rapid Thermal Annealing on the Structural and Electrical Properties of Na-doped ZnMgO FIlms

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Electrical Property and Annealing Characteristics of Heavy Mg-doped GaN Films

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Properties of Mg-Doped AlGaN Films

Reduction of Yellow and Blue Luminescence in Si-doped GaN by Rapid Thermal Annealing

Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO films

Rapid Thermal Annealing Effects on the Structural and Optical Properties of Na–N Codoped ZnO Films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Activation of Mg Impurities in Epitaxial P-Gan with Rapid Thermal Annealing Assisted Supercritical Fluid Treatment

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Annealing effect on electrical properties of high-k MgZnO film on silicon

High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films

The study of rapid thermal annealing on arsenic-doped ZnO for the p-type ZnO formation

Effect of High Temperature, High Pressure Annealing on GaN Drift Layers for Vertical Power Devices