Abstract:To improve the sensing performance, the GaN-based metal oxide semiconductor (MOS)-high-electron mobility transistor (HEMT) biosensor with graded AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results indicate that the proposed device exhibits higher sensitivity than that with the conventional AlGaN barrier. Furthermore, the impact of graded AlGaN barrier layer thickness (15-30 nm) and maximum Al mole fraction (0.1-0.25) was investigated systematically to optimize sensing sensitivity. It is demonstrated that the sensitivity of MOS-HEMT biosensors can be enhanced by decreasing the thickness or increasing the maximum Al mole fraction of graded barrier layer. This can be mainly attributed to the variation in carrier concentration and energy band structure in the MOS-HEMT heterostructure. In addition, the effect of biomolecule filling rate in the cavity on device performance was also studied. It is found that the sensitivity increases with the biomolecule filling rate. In the ideal state of 100% biomolecule filling rate, the sensing currents of MOS-HEMT biosensor reached 72.8, 154.9, 238.6, 351.8, and 399.3 mA/mm for uricase, streptavidin, biotin, ChOx, and APTES biomolecules, respectively, which are superior than previous reported MOS-HEMT biosensors. This work provides fundamental support for the development of highly sensitive GaN-based MOS-HEMT biosensors.

Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Enhancement of Sensing Performance of GaN-based MOS-HEMT Biosensors by Graded AlGaN Barrier

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Applications of AlGaN/GaN High Electron Mobility Transistor-Based Sensors in Water Quality Monitoring

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Improved Ultraviolet Detection and Device Performance of Al 2 O 3 -Dielectric in 0.17 Al 0.83 N/AlN/GaN MOS-HFETs

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

The Sensing Mechanism of InAlN/GaN HEMT