Abstract:pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring. However, their performance is affected by many factors, such as gate dielectric material, channel material and channel thickness. In order to obtain a pH sensor with high sensitivity and fast response, it is necessary to determine the appropriate equipment parameters, which have high processing cost and long production time. In this study, a nanostructured ion-sensitive field-effect transistor was developed based on the SILVACO technology computer-aided design (TCAD) simulator. Through experiments, we analyzed the effects of the gate dielectric material, channel material and channel thickness on the electrical characteristics of the nanostructured field-effect transistor. Based on simulation results, silicon nitride was selected as the gate dielectric layer, while indium oxide was chosen as the channel layer. The structure and parameters of the dual channel ion-sensitive field-effect transistor were determined and discussed in detail. Finally, according to the simulation results, a pH sensor based on the nanostructured ion-sensitive field-effect transistor was fabricated. The accuracy of simulation results was verified by measuring the output, transfer and pH characteristics of the device. The fabricated pH sensor had a subthreshold swing as low as 143.19 mV/dec and obtained an actual sensitivity of 88.125 mV/pH. In addition, we also tested the oxidation reaction of hydrogen peroxide catalyzed by horseradish peroxidase, and the sensitivity was up to 144.26 pA mol(-1) L-1, verifying that the ion-sensitive field-effect transistor (ISFET) can be used to detect the pH of micro solution, and then combine the enzyme-linked assay to detect the concentration of protein, DNA, biochemical substances, biomarkers, etc.

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device

Ethanolamine Modified ZnO Nanorods-Based Disposable Gate-AlGaN/GaN High Electron Mobility Transistor for pH Sensing

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure

Ph Sensor Based on an AlGaN/GaN HEMT Structure

Planar Dual Gate GaN HEMT Cascode Amplifier As a Voltage Readout Ph Sensor with High and Tunable Sensitivities

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

Fabrication of High-Performance Dual-Gate ISFET Ph Sensors Using In2O3 Nano-Channel

Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized Alinn/Gan High Electron Mobility Transistors

Applications of AlGaN/GaN High Electron Mobility Transistor-Based Sensors in Water Quality Monitoring

Design And Implementation Of A Ph Sensor For Micro Solution Based On Nanostructured Ion-Sensitive Field-Effect Transistor