Abstract:We investigated an extended-gate field-effect transistor (EG-FET) as a pH sensor in this work. It was based on low-temperature hydrothermally grown one-dimensional (1-D) zinc oxide (ZnO) nanorod (NR) arrays. Additionally, silver nanoparticles (Ag NPs) were successfully synthesized on the surfaces of nanostructures through a simple photochemical synthesis process under ultraviolet (UV) light illumination at room temperature. The surface morphology, crystalline nature, elemental content, optical property, and electrical performance of both samples were explored and studied by field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), X-ray diffraction (XRD) system, energy-dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectrometer, UV–visible spectroscopy, and a Keithley 2410 semiconductor parameter analyzer with a personal computer. FE-SEM pictures, HR-TEM patterns, and XRD results indicated that the growth of all nanostructures preferentially oriented along the c-axis resulted in hexagonal wurtzite crystals, and the 1-D NRs grew vertically on the ZnO seed layer-coated substrate. The Z@Ag-1 samples were composed of Ag (2.64 atom %), Zn (58.17 atom %), and O (39.19 atom %) in the EDX result. HR-TEM elemental mappings, EDX images, and XPS spectra demonstrated that Ag NPs existed on the surface of the 1-D ZnO NR arrays. The optical characteristics of PL analysis and UV–visible spectroscopy showed two emissions, including UV and the visible region. In the electrical section, all pH sensors showed good pH stability properties and remarkable repeatability. After Ag NP decoration, the 1-D Z@Ag-1 samples exhibited superior pH-sensing response characteristics (59.06 mV/pH, 45.65 μA/pH) with good linearity (0.996, 0.998). Meanwhile, the hysteresis effect was only 1.49 mV as the pH of the solution changed in the following order: pH 7 → pH 4 → pH 7 → pH 10 → pH 7. The designed 1-D Z@Ag-1 pH sensors will be remarkably useful in pH-sensing fields and can be combined with Internet-of-Things applications, particularly in industrial, agricultural, medical, and military fields.

Ethanolamine Modified ZnO Nanorods-Based Disposable Gate-AlGaN/GaN High Electron Mobility Transistor for pH Sensing

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Enzymatic Lactic Acid Sensing by In-doped ZnO Nanowires Functionalized AlGaAs/GaAs High Electron Mobility Transistor

On-chip surface modified nanostructured ZnO as functional pH sensors

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Highly Sensitive AlGaN/GaN HEMT Biosensors Using an Ethanolamine Modification Strategy for Bioassay Applications

Ph Sensor Based on an AlGaN/GaN HEMT Structure

Applications of AlGaN/GaN High Electron Mobility Transistor-Based Sensors in Water Quality Monitoring

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

Enhanced Ph Sensitivity of AlGaN/GaN Ion-Sensitive Field Effect Transistor with Al2O3 Synthesized by Atomic Layer Deposition

Normally off AlGaN/GaN Ion-Sensitive Field Effect Transistors Realized by Photoelectrochemical Method for Ph Sensor Application

Study of Mechanism and Testing Method for Ph Sensing Using Open-Gate AlGaN/GaN High Electron Mobility Transistors

ENZYME-BASED LACTIC ACID DETECTION USING ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR WITH SB-DOPED ZNO NANOWIRES GROWN ON THE GATE REGION

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor.

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Enhancing the Sensitivity of GaN High Electron-Mobility Transistors-Based Ph Sensor by Dual Function of Monolithic Integrated Planar Multi-Channel and Ultraviolet Light