Enzymatic Lactic Acid Sensing by In-doped ZnO Nanowires Functionalized AlGaAs/GaAs High Electron Mobility Transistor

Siwei Ma,Xiaohui Zhang,Qingliang Liao,Hanshuo Liu,Yunhua Huang,Yu Song,Yanguang Zhao,Yue Zhang
DOI: https://doi.org/10.1016/j.snb.2015.01.120
2015-01-01
Abstract:Indium (In) doped zinc oxide (ZnO) nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was demonstrated for the detection of lactic acid. The In-doped ZnO nanowires were synthesized via chemical vapor deposition (CVD) method. Such In-doped ZnO nanowires offered an effective surface area with high surface area-to-volume ratio as well as a favorable environment for the immobilization of lactate oxidase (LOX) on the HEMT gate area. The In-doped ZnO nanowires have better conductivity than pure ZnO nanowires and retained the electroactivity of enzymes. Due to the novel structure of the Si-doped GaAs cap layer, the drain–source current of the AlGaAs/GaAs HEMT sensor showed a rapid response when lactic acid solutions at various concentrations were introduced to the gate area of the HEMT. The fabricated sensor exhibited a wide detection range from 3pM to 3mM and a low detection limit of 3pM. The result indicated that a portable, fast response and high sensitivity lactic acid detector can be realized by AlGaAs/GaAs HEMT sensor.
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