Abstract:The chemical activity of ionized hydrogen describes the potency of protons in solution and is used to define the pH with wide-ranging applications in biological and materials sciences. Measuring pH with graphene field-effect transistors (FETs) has been described in the past but has yet to be characterized with a monolayer hexagonal boron nitride (hBN) capping layer. hBN capping is hypothesized to lower the chemical affinity of protons to oxidized defects in the graphene crystal and lower the standard deviation of pH measurement via screening charge density. First, the electronic properties of commercial, monolayer graphene and monolayer hBN/graphene, both on four-inch 90 nm SiO2/p-type Si, were contrasted as a function of solutal pH in 10 mM phosphate buffered solution. The two-dimensional (2D) FETs were fabricated with photoresistless metallization followed by microcentrifuge tube-masking and reactive ion etching to define a quasi-pure 2D sensing mesa for pH sensing. Thereafter, the devices were exposed to phosphate buffer of varying pH and the resistance and liquid-transfer characteristics measured. The hBN/graphene/SiO2 FETs had higher linearity, and both lower standard deviation and range of Dirac voltage shifting than monolayer graphene/SiO2. Then, before microcentrifuge tube-masking, freshly metallized devices were coated with 9 nm of Al2O3 by electron beam deposition. The Al2O3/graphene/SiO2 and Al2O3/hBN/graphene/SiO2 devices showed an altered response to the pH of the phosphate buffered solutions before and after basic etching of the Al2O3 with NaOH (pH = 12). This prompted studying the pH-dependencies of the 2D devices as a function of the thickness of Al2O3 via atomic layer deposition. These results show that modifying the surface of monolayer graphene with nanoscale dielectrics enables tuning of the pH-dependent electronic properties of graphene pH sensors.

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

Ph Sensor Based on an AlGaN/GaN HEMT Structure

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Applications of AlGaN/GaN High Electron Mobility Transistor-Based Sensors in Water Quality Monitoring

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device

Ethanolamine Modified ZnO Nanorods-Based Disposable Gate-AlGaN/GaN High Electron Mobility Transistor for pH Sensing

Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors

Fabrication of High-Performance Dual-Gate ISFET Ph Sensors Using In2O3 Nano-Channel

Comparing solution-gate and bottom-gate nanowire field-effect transistors on pH sensing with different salt concentrations and surface modifications

Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor.

Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors

Enhancement of Sensing Performance of GaN-based MOS-HEMT Biosensors by Graded AlGaN Barrier

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs