Abstract:We develop rational chemical strategies to synthesize novel one-dimensional nanowire materials of transition metal silicides, investigate their physical properties, and use them as nanoscale building blocks for the bottom-up assembly of integrated photonic, electronic, and spintronic nanosystems. Transition metal silicides are extremely important to microelectronics because of the ohmic contact and interconnect many silicides (NiSi, CoSi2, and TiSi2) provide. Furthermore, many silicides are direct bandgap semiconductors (CrSi2, β-FeSi2) and are promising for silicon-based photonics. The recent discovery of FexCo1-xSi alloys as ferromagnetic semiconductors make them promising for spintronic applications as well. Herein, we describe the chemical synthesis of free standing single-crystal nanowires (NWs) of FeSi, the only transition metal Kondo insulator and isostructural CoSi, an important metallic silicide for CMOS electronics. Straight and smooth FeSi and CoSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single source organometallic precursors trans-Fe(SiCl3)2(CO)4 and Co(SiCl3)(CO)4, respectively, in a simple chemical vapor deposition (CVD) process. Unlike typical vapor-liquid-solid (VLS) NW growth, silicide NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. The physical properties of these new FeSi and CoSi nanowires, including electrical transport and X-ray spectroscopy, are reported. This general approach to silicide nanowire growth is likely to yield other functional silicide nanosystems with significant applications in nanoelectronics and nanophotonics, and for FexCo1-xSi, silicon based spintronics.

Real-Time TEM Observation of the Role of Defects on Nickel Silicide Propagation in Silicon Nanowires

Atomistic Exploration of Deformation Properties of Copper Nanowires with Pre-Existing Defects

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Defect-driven Selective Metal Oxidation at Atomic Scale.

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Tiny silicon nano-wires synthesis on silicon wafers

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Synthesis, Characterization, and Physical Properties of Transition Metal Silicide Nanowires

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Exploring Native Atomic Defects in NiTe2

Preparation of Nisi2 Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Electrical Failure Behaviors of Semiconductor Oxide Nanowires

Silicon Nanowires, Catalytic Growth and Electrical Characterization