Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

High frequency CV measurements of SiC MOS capacitors

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Characterization of Cubic Phase MgZnO/Si(1 0 0) Interfaces

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887−yGe0.113Cy films

MOS Capacitor Characteristics of 3C-Sic Films Deposited on Si Substrates at 1270°C

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Investigation of SiO<sub>2</sub>-SiC Interface by High-Resolution Transmission Electron Microscope

Study on the AlN/Si Interface Properties

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate