Abstract:With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection (HCI) stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator (SOI) MOSFETs under the HCI stress are investigated on devices of different gate lengths (L=30-150 nm). Our experimental data demonstrate that the time evolutions of the threshold voltage change (Vth) under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier (CHC) effect and the bias temperature instability (BTI) effect. The distribution and magnitude of the electric field along the MOSFET's channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Vth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Vth=A•tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experiments of the HCI stress on MOSFTTs show larger recovery in device of shorter gate length. It is found that the ratio of the recovery to the total degradation in the 30 nm gate-length device is almost twice as large as that in the 150 nm device. The degradation from the CHC effect has no recovery, and the larger recovery in the shorter-channel device implies the larger component of the BTI degradation. Another intriguing fact is that our experimental result on SOI MOSFET is inconsistent with the recently reported result on FinFET. We argue that the reported stronger HCI degradation in FinFET may not be ascribed only to the stronger electric field in the shorter channel, but also to the fact that the FinFET' channel is three-dimensionally surrounded by the gate dielectric. This kind of three-dimensional structure significantly increases the chance for electrons or holes to be injected into the dielectric layer. Therefore the HCI reliability of planar SOI MOSFETs may be better than that of FinFETs at the same level of gate length. In conclusion, the BTI effect is an important source of the degradation during the HCI stress in ultra-short-channel device, and it is no more negligible in analyzing the underlying physical mechanism.

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

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Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Characteristics of 25nm Mosfets with Mechanical Strain in the Channel

Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Impact of stress on band-to-band tunneling current in SOI MOSFET based on first-principles calculation

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

in p-type 3 C – SiC four-terminal devices under mechanical stress †

Experimental Study on Nbti Degradation Behaviors in Si Pmosfets under Compressive and Tensile Strains