Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Short–Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

A Temperature-Dependent Pspice Short-Circuit Model Of Sic Mosfet

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

An analytical subthreshold I-V model of SiC MOSFETs

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism

Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs