Abstract:The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips present in such devices and its operating condition. However, measurements of the semiconductor temperatures are often difficult to be done, thus requiring modeling and simulation tools to accurately evaluate the instantaneous temperature under different thermal loads. For this reason, a transient 3D heat transfer numerical model of two different IGBT power devices was proposed using the Finite Element Method, assuming that heat is dissipated on the IGBT by natural convection and radiation. These simulations were validated with experimental measurements, obtained through infrared thermography, performed for the IGBT modules either opened or enclosed, varying the heat source, the module orientation and under conduction or switching regime. For the switching regime, power losses due to the gate-closing and gate-opening transitions between conducting and non-conducting states were taken into consideration. The heat losses were modeled assuming the time-dependent heat dissipation obtained by previous electrical simulations, and it was compared with time-averaged heat source solutions. Results showed that averaging the heat source can significantly reduce the computational time, allowing quick design explorations. Overall, the numerical model led to deviations of less than 16% over the transient heating and at steady-state. Finally, the impact of a heat sink attached to the IGBT was studied, demonstrating that the proposed model can be used for accurate and quick investigations of potential failures and for the development of more efficient IGBT devices.

Study of Accelerated Power Cycling Test of IGBT Power Modules

Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test

Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions

A High Accuracy and Low-Cost Fatigue Life Evaluation Method for IGBTs Based on Variable-Parameter Power Cycling

Failure Mechanism of Die-Attach Solder Joints in IGBT Modules Under Pulse High-Current Power Cycling

LF-OCT Based Non Destructive Testing for IGBT Module

A Lifetime Prediction Method for IGBT Modules Considering the Self-Accelerating Effect of Bond Wire Damage

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

Research on the Electro-Thermal–Mechanical Properties of IGBT Modules Under Different Bond Wire Failure Modes

A Review on IGBT Module Failure Modes and Lifetime Testing

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Dynamical Junction Temperature Online Extraction With Thermal Sensitive Electrical Parameters for High Power IGBT Modules

Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests

Junction Temperature Extraction with Maximum Collector Current Falling Rate during Turn-Off for Press-Pack IGBT Modules

Online Junction Temperature Extraction with Turn-off Delay Time for High Power IGBTs